Patent · US Active

Memory error repair

US9824779B2 · kind B2 · utility

3Cited by

3References

20Claims

0Family size

Assignee

Rambus Inc. · US

Inventors

Frederick A. Ware · Los Altos Hills, US
Vlad Fruchter · Los Altos, US
Chi-Ming Yeung · Cupertino, US

Key dates

Filing date	May 20, 2015
Grant date	Nov 21, 2017
Priority date	—
Expiry date	Dec 17, 2035

Classification

Technology area (CPC G)Physics
CPC primaryG11C2029/4402
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

In response to a first memory access transaction having a first base address, data fields and a repair fields are retrieved from a first DRAM channel. The data fields include a first data field. The repair fields include a first repair field storing repair data. The repair data is to replace any data in the first data field. In response to a second memory access transaction having a second base address, repair tag fields are retrieved from a second DRAM channel. The repair tag fields include a repair tag field that indicates the repair data is be replace the data stored in the first data field.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.