Contacts for semiconductor devices and methods of forming thereof
US9824972B2 · kind B2 · utility
0Cited by
10References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2016 |
| Grant date | Nov 21, 2017 |
| Priority date | — |
| Expiry date | Dec 19, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for a method of forming a semiconductor device includes providing a semiconductor substrate having a bottom surface opposite a top surface with circuitry disposed at the top surface. The method further includes forming a first metal layer having a first metal over the bottom surface of the semiconductor substrate. The first metal layer is formed by depositing an adhesion promoter followed by depositing the first metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.