Heterojunction bipolar transistor with stress component
US9825157B1 · kind B1 · utility
5Cited by
21References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2016 |
| Grant date | Nov 21, 2017 |
| Priority date | — |
| Expiry date | Jun 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a heterojunction bipolar transistor with a stress component and methods of manufacture. The heterojunction bipolar transistor includes a collector region, an emitter region and a base region. Stress material is formed within a trench of a substrate and surrounding at least the collector region and the base region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.