Apparatus and process for producing a single crystal of silicon

US9828692B2 · kind B2 · utility

Assignee

• Siltronic AG · DE

Inventors

• Georg Brenninger · Oberbergkirchen, DE
• Waldemar Stein · Burghausen, DE
• Maik Haeberlen · Burghausen, DE

Key dates

• Filing date: Mar 27, 2015
• Grant date: Nov 28, 2017
• Expiry date: Aug 6, 2035

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B29/06
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

An apparatus for producing a single crystal of silicon comprises a plate with a top side, an outer edge, and an inner edge, a central opening adjoining the inner edge, and a tube extending from the central opening to beneath the bottom side of the plate;