Apparatus and process for producing a crystal of semiconductor material

US9828693B2 · kind B2 · utility

Assignee

• Siltronic AG · DE

Inventors

• Georg Brenninger · Oberbergkirchen, DE
• Georg Raming · Tann, DE

Key dates

• Filing date: May 14, 2015
• Grant date: Nov 28, 2017
• Expiry date: Aug 6, 2035

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T117/108
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A crystal of semiconductor material is produced in an apparatus having a crucible with a crucible bottom and a crucible wall, the crucible bottom having a top surface, an underside, and a multitude of openings disposed between the crucible wall and a center of the crucible bottom, and elevations disposed on the top surface and the underside of the crucible bottom; and an induction heating coil disposed below the crucible for melting semiconductor material and stabilizing a melt of semiconductor material covering a growing crystal of semiconductor material. The growth process comprises generating a bed of a semiconductor material feed on the top surface of the crucible bottom and melting semiconductor material on the bed using the induction heating coil.