Nonvolatile semiconductor storage device including a discharge transistor for discharging a bit line to a source line
US9830961B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 29, 2016 |
| Grant date | Nov 28, 2017 |
| Priority date | — |
| Expiry date | Jan 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor storage device a memory cell array including a plurality of memory cell units arranged in a matrix configuration, the memory cell units including a memory string including a series connection of a plurality of memory cells that stores data in accordance with a threshold voltage and is capable of electrical data writing and erasure, a first select gate transistor that connects a first end of the memory string to a bit line and a second select gate transistor that connects a second end of the memory string to a source line. The nonvolatile semiconductor storage device a discharge transistor that is connected between the bit line and the source line and causes discharge of the bit line to the source line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.