Interconnect structures
US9831124B1 · kind B1 · utility
1Cited by
1References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2016 |
| Grant date | Nov 28, 2017 |
| Priority date | — |
| Expiry date | Oct 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to interconnect structures and methods of manufacture. The structure includes: a cobalt metallization structure with a modified surface of etch chemistries; a layer of material on the modified surface; and an interconnect structure in direct contact with the material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.