Embedded HKMG non-volatile memory

US9831262B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Wei-Cheng Wu · Hengshan, TW
• Tzu-Yu Chen · Kaohsiung, TW

Key dates

• Filing date: Dec 30, 2015
• Grant date: Nov 28, 2017
• Expiry date: Dec 30, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/021

Abstract

The present disclosure relates to an integrated circuit (IC) that includes a high-k metal gate (HKMG) non-volatile memory (NVM) device and that provides small scale and high performance, and a method of formation. In some embodiments, the integrated circuit includes a memory region having a select transistor and a control transistor laterally spaced apart over a substrate. A select gate electrode and a control gate electrode are disposed over a high-k gate dielectric layer and a memory gate oxide. A logic region is disposed adjacent to the memory region and has a logic device including a metal gate electrode disposed over the high-k gate dielectric layer and a logic gate oxide. The select gate electrode and the control gate electrode can be polysilicon electrodes.