Nonvolatile semiconductor memory device and method for manufacturing the same
US9831270B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2017 |
| Grant date | Nov 28, 2017 |
| Priority date | — |
| Expiry date | Mar 16, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes first and second connectors, first and second conductive layers, a first insulating region, and a memory portion. The first connector extends in a first direction. The first conductive layer is electrically connected to the first connector, and includes a first planar region, a first overlap region, a first side surface region, and a first crossing side surface region. The second connector extends in the first direction. The second conductive layer is electrically connected to the second connector, and includes a second planar region, a second overlap region, a second side surface region, and a second crossing side surface region. The first insulating region is provided between the first and second conductive layers. The memory portion is connected to the first and second planar regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.