Integrated circuit cointegrating a FET transistor and a RRAM memory point
US9831288B2 · kind B2 · utility
7Cited by
3References
13Claims
0Family size
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Inventors
Key dates
| Filing date | Dec 22, 2016 |
| Grant date | Nov 28, 2017 |
| Priority date | — |
| Expiry date | Dec 22, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The invention relates to an integrated circuit (1), comprising:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.