Bipolar semiconductor device having a deep charge-balanced structure

US9831330B2 · kind B2 · utility

Assignee

• Infineon Technologies Americas Corp. · US

Inventors

• Florin Udrea · Cambridge, GB
• Alice Pei-Shan Hsieh · Cambridge, GB
• Gianluca Camuso · Cambridge, GB
• Chiu Ng · El Segundo, US
• Yi Tang · Torrance, US
• Rajeev Krishna Vytla · Los Angeles, US

Key dates

• Filing date: Dec 31, 2015
• Grant date: Nov 28, 2017
• Expiry date: Dec 31, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/111

Abstract

There are disclosed herein various implementations of a bipolar semiconductor device having a deep charge-balanced structure. Such a device includes a drift region having a first conductivity type situated over an anode layer having a second conductivity type. The device also includes a control trench extending through an inversion region having the second conductivity type into the drift region, and bordered by a cathode diffusion having the first conductivity type. In addition, the device includes a deep sub-trench structure situated under the control trench. The deep sub-trench structure includes one or more first conductivity regions having the first conductivity type and one or more second conductivity region having the second conductivity type, the one or more first conductivity regions and the one or more second conductivity regions configured to substantially charge-balance the deep sub-trench structure. In one implementation, the bipolar semiconductor device is an insulated-gate bipolar transistor (IGBT).