Memory cell with independently-sized electrode
US9831428B2 · kind B2 · utility
2Cited by
13References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2015 |
| Grant date | Nov 28, 2017 |
| Priority date | — |
| Expiry date | Jan 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Memory cell architectures and methods of forming the same are provided. An example memory cell can include a switch element and a memory element. A middle electrode is formed between the memory element and the switch element. An outside electrode is formed adjacent the switch element or the memory element at a location other than between the memory element and the switch element. A lateral dimension of the middle electrode is different than a lateral dimension of the outside electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.