Raised fin structures and methods of fabrication
US9837268B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2016 |
| Grant date | Dec 5, 2017 |
| Priority date | — |
| Expiry date | May 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating raised fin structures is provided, the fabricating including: providing a substrate and at least one dielectric layer over the substrate; forming a trench in the at least one dielectric layer, the trench having a lower portion, a lateral portion, and an upper portion, the upper portion being at least partially laterally offset from the lower portion and being joined to the lower portion by the lateral portion; and, growing a material in the trench to form the raised fin structure, wherein the trench is formed to ensure that any growth defect in the lower portion of the trench terminates either in the lower portion or the lateral portion of the trench and does not extend into the upper portion of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.