Methods for manufacturing semiconductor devices

US9837280B2 · kind B2 · utility

Assignee

• Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

• Kurt Sorschag · Villach, AT
• Daniel Sarlette · Radebeul, DE
• Felix Braun · Dresden, DE
• Marcel Heller · Neustadt in Sachsen, DE
• Dieter Kaiser · Dortmund, DE
• Ingo Meusel · Dresden, DE
• Marko Lemke · Dresden, DE
• Anton Mauder · Kolbermoor, DE
• Helmut Strack · Hersbruck, DE

Key dates

• Filing date: Aug 5, 2016
• Grant date: Dec 5, 2017
• Expiry date: Sep 4, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/117
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming a semiconductor device includes providing a semiconductor substrate having an upper side and comprising, in a vertical cross-section substantially orthogonal to the upper side, a plurality of semiconductor mesas of a first monocrystalline semiconductor material which are spaced apart from each other by sacrificial layers selectively etchable with respect to the first monocrystalline semiconductor material and arranged in trenches extending from the upper side into the semiconductor substrate, forming on the semiconductor mesas a support structure mechanically connecting the semiconductor mesas, at least partly replacing the sacrificial layers while the semiconductor mesas remain mechanically connected via the support structure, and at least partly removing the support structure.