Cyclic doped aluminum nitride deposition

US9837281B2 · kind B2 · utility

Assignee

• ASM IP Holding B.V. · NL

Inventors

• Bert Jongbloed · Oud-Heverlee, BE
• Dieter Pierreux · Dilbeek, BE
• Werner Knaepen · Leuven, BE

Key dates

• Filing date: May 25, 2016
• Grant date: Dec 5, 2017
• Expiry date: May 25, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/3115
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A process for depositing doped aluminum nitride (doped AlN) is disclosed. The process comprises subjecting a substrate to temporally separated exposures to an aluminum precursor and a nitrogen precursor to form an aluminum and nitrogen-containing compound on the substrate. The aluminum and nitrogen-containing compound is subsequently exposed to a dopant precursor to form doped AlN. The temporally separated exposures to an aluminum precursor and a nitrogen precursor, and the subsequent exposure to a dopant precursor together constitute a doped AlN deposition cycle. A plurality of doped AlN deposition cycles may be performed to deposit a doped AlN film of a desired thickness. The dopant content of the doped AlN can be tuned by performing a particular ratio of 1) separated exposures to an aluminum precursor and a nitrogen precursor, to 2) subsequent exposures to the dopant. The deposition may be performed in a batch process chamber, which may accommodate batches of 25 or more substrates. The deposition may be performed without exposure to plasma.