Atomic layer etching for enhanced bottom-up feature fill

US9837312B1 · kind B1 · utility

Assignee

• Lam Research Corporation · US

Inventors

• Samantha Tan · Fremont, US
• Taeseung Kim · Fremont, US
• Jengyi Yu · San Ramon, US
• Praveen Nalla · Fremont, US
• Novy Tjokro · Union City, US
• Artur Kolics · Dublin, US
• Keren Jacobs Kanarik · Los Altos, US

Key dates

• Filing date: Oct 5, 2016
• Grant date: Dec 5, 2017
• Expiry date: Oct 5, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76898
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Atomic layer etching (ALE) enables effective filling of small feature structures on semiconductor and other substrates, such as contacts and vias, by bottom-up fill, for example electroless deposition (ELD) of cobalt.