Tin-zinc microbump structures
US9837341B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2016 |
| Grant date | Dec 5, 2017 |
| Priority date | — |
| Expiry date | Sep 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15747
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Techniques and mechanisms for providing effective connectivity with surface level microbumps on an integrated circuit package substrate. In an embodiment, different metals are variously electroplated to form a microbump which extends through a surface-level dielectric of a substrate to a seed layer including copper. The microbump includes a combination of tin and zinc that mitigates precipitation of residual copper by promoting the formation of miconstituents in the microbump. In another embodiment, the microbump has a mass fraction of zinc, or a mass fraction of tin, that is different in various regions along a height of the microbump.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.