Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures

US9837506B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Roman Baburske · Otterfing, DE
• Matteo Dainese · Munich, DE
• Peter Lechner · Vaterstetten, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Johannes Georg Laven · Taufkirchen, DE

Key dates

• Filing date: Feb 1, 2017
• Grant date: Dec 5, 2017
• Expiry date: Feb 1, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/106
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of manufacturing a semiconductor device includes forming electrode trenches in a semiconductor substrate between semiconductor mesas that separate the electrode trenches, the semiconductor mesas including portions of a drift layer of a first conductivity type and a body layer of a second, complementary conductivity type between a first surface of the semiconductor substrate and the drift layer, respectively. The method further includes forming isolated source zones of the first conductivity type in the semiconductor mesas, the source zones extending from the first surface into the body layer. The method also includes forming separation structures in the semiconductor mesas between neighboring source zones arranged along an extension direction of the semiconductor mesas, the separation structures forming partial or complete constrictions of the semiconductor mesa, respectively.