Multi-state program using controlled weak boosting for non-volatile memory
US9842657B1 · kind B1 · utility
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4References
20Claims
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Key dates
| Filing date | May 18, 2017 |
| Grant date | Dec 12, 2017 |
| Priority date | — |
| Expiry date | May 18, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5622
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Multi-state programming of non-volatile memory cells, where cells being programmed to different target states are programmed concurrently, is performed by modulating the program speed of each state using a controlled amount of state-dependent weak boosting in their respective channels. In one example, the channel boosting is controlled by using a multi-stair word line ramp in conjunction with raising of the voltage on bit lines at a time based on the corresponding memory cell's target state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.