Method and apparatus for the detection of arc events during the plasma processing of a wafer, surface of substrate
US9842726B2 · kind B2 · utility
11Cited by
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27Claims
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Key dates
| Filing date | Aug 12, 2010 |
| Grant date | Dec 12, 2017 |
| Priority date | — |
| Expiry date | Apr 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/14
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for monitoring at least one process parameter of a plasma process being performed on a semiconductor wafer, surface or surface and determine arc events occurring within the plasma tool chamber. The method comprises the steps of detecting the modulated light being generated from the plasma sheath during the plasma process; sampling RF voltage and current signals from the RF transmission line; processing the detected modulated light and the RF signals to produce at least one monitor statistic for the plasma process, and process the monitor signal to determine the occurrence of arcing events during the wafer processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.