Method of enabling seamless cobalt gap-fill
US9842769B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 3, 2016 |
| Grant date | Dec 12, 2017 |
| Priority date | — |
| Expiry date | May 3, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/027
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.