Memory device containing cobalt silicide control gate electrodes and method of making thereof
US9842907B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2015 |
| Grant date | Dec 12, 2017 |
| Priority date | — |
| Expiry date | Oct 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An alternating stack of insulating layers and sacrificial material layers can be formed over a substrate. Memory stack structures and a backside trench are formed through the alternating stack. Backside recesses are formed by removing the sacrificial material layers from the backside trench selective to the insulating layers. A cobalt-semiconductor alloy portion is formed in each backside recess by reacting cobalt and a semiconductor material. Conductive material in the backside trench can be removed by an etch to electrically isolate cobalt-containing alloy portions located in different backside recesses. Electrically conductive layers including a respective cobalt-semiconductor alloy portion can be employed as word lines of a three-dimensional memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.