Ohmic contact structure for semiconductor device and method
US9842923B2 · kind B2 · utility
3Cited by
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16Claims
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Key dates
| Filing date | Feb 26, 2014 |
| Grant date | Dec 12, 2017 |
| Priority date | — |
| Expiry date | Jun 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
In one embodiment, a high electron mobility device structure includes heterostructure with a Group III-nitride channel layer and a Group III-nitride barrier layer that forms a two-dimensional electron gas layer at an interface between the two layers. At least one current carrying electrode includes a recess-structured conductive contact adjoining and making Ohmic contact with the two-dimensional electron gas layer. The recess-structured conductive contact has at least one side surface defined to have a rounded wavy shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.