Method, apparatus and system for using free-electron laser compatible EUV beam for semiconductor wafer metrology
US9844124B2 · kind B2 · utility
2Cited by
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20Claims
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Key dates
| Filing date | Mar 12, 2015 |
| Grant date | Dec 12, 2017 |
| Priority date | — |
| Expiry date | Nov 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/0903
- WIPO fieldMedical technology
- WIPO sectorInstruments
Abstract
At least one method, apparatus and system for providing capturing synchrotron radiation for a metrology tool, are disclosed. A beam using a first light emitting device is provided. The first light emitting device comprises a first electron path bend. A first synchrotron radiation is provided from the first electron path bend to a first metrology tool configured to perform a metrology inspection using the first synchrotron radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.