Treatment for flowable dielectric deposition on substrate surfaces

US9847222B2 · kind B2 · utility

Assignee

• Lam Research Corporation · US

Inventors

• Patrick Reilly · Dublin, US
• Harald te Nijenhuis · Fremont, US
• Nerissa Draeger · Milpitas, US
• Bart J. van Schravendijk · Sunnyvale, US
• Nicholas Muga Ndiege · San Jose, US

Key dates

• Filing date: Oct 21, 2014
• Grant date: Dec 19, 2017
• Expiry date: Dec 12, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76837
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Provided herein are methods and apparatus for improved flowable dielectric deposition on substrate surfaces. The methods involve improving nucleation and wetting on the substrate surface without forming a thick high wet etch rate interface layer. According to various embodiments, the methods may include single or multi-stage remote plasma treatments of a deposition surface. In some embodiments, a treatment may include exposure to both a reducing chemistry and a hydrogen-containing oxidizing chemistry. Apparatus for performing the methods are also provided.