Method for filling gaps of semiconductor device and semiconductor device formed by the same
US9847247B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 9, 2017 |
| Grant date | Dec 19, 2017 |
| Priority date | — |
| Expiry date | May 9, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for filling gaps of semiconductor device and a semiconductor device with insulation gaps formed by the same are provided. First, a silicon substrate with plural protruding portions is provided, and the protruding portions are spaced apart from each other by gaps with predetermined depths. A nitride-containing layer is formed above the silicon substrate for covering the protruding portions and surfaces of the gaps as a liner nitride. Then, an amorphous silicon layer is formed on the nitride-containing layer. An insulating layer is formed on the amorphous silicon layer, and the gaps are filled up with the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.