Semiconductor device and method for fabricating the same
US9847351B2 · kind B2 · utility
0Cited by
3References
20Claims
0Family size
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Key dates
| Filing date | Jan 26, 2016 |
| Grant date | Dec 19, 2017 |
| Priority date | — |
| Expiry date | Jan 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/021
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region and a second region; forming a gate layer on the substrate; forming a first gate dielectric layer on the gate layer; forming a first channel layer on the first region and a second channel layer on the second region; and forming a first source/drain on the first channel layer and a second source/drain on the second channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.