Semiconductor device
US9847393B2 · kind B2 · utility
0Cited by
3References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2016 |
| Grant date | Dec 19, 2017 |
| Priority date | — |
| Expiry date | Oct 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
A semiconductor device is disclosed. The semiconductor device includes: a substrate, a gate structure on the substrate, a spacer adjacent to the gate structure, an epitaxial layer in the substrate adjacent to two sides of the spacer, and a dislocation embedded within the epitaxial layer. Preferably, the top surface of the epitaxial layer is lower than the top surface of the substrate, and the top surface of the epitaxial layer has a V-shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.