Patent · US Active

Atomic scale grid for modeling semiconductor structures and fabrication processes

US9852242B2 · kind B2 · utility

3Cited by
1References
54Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 5, 2014
Grant dateDec 26, 2017
Priority date
Expiry dateSep 13, 2036

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06F2111/12
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Roughly described, a system for simulating a temporal process in a body includes a meshing module to impose a grid of nodes on the body, the grid having a uniform node spacing which is less than the quantum separation distance in silicon. A system of node equations is provided, including at least one node equation for each of a plurality of nodes of the grid. The node equations describe behavior of at least one physical quantity at that node through each time step of the process. An iterating module iterates through the time steps to determine values for physical quantities of the body at the end of the simulation period. Preferably one particle of the body is assigned to each node of the grid. For moving boundary processes, boundary movement can be represented simply by changing the particle type assigned to various nodes of the grid as the boundary advances.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.