Systems and methods for reducing backside deposition and mitigating thickness changes at substrate edges

US9852901B2 · kind B2 · utility

Assignee

• Lam Research Corporation · US

Inventors

• Sesha Varadarajan · Wilsonville, US
• Shankar Swaminathan · Hillsboro, US
• Saangrut Sangplung · Sherwood, US
• Frank L. Pasquale · Beaverton, US
• Ted Minshall · Sherwood, US
• Adrien LaVoie · Newberg, US
• Mohamed Sabri · Beaverton, US
• Cody Barnett · Portland, US

Key dates

• Filing date: Sep 2, 2016
• Grant date: Dec 26, 2017
• Expiry date: Sep 2, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02274
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume and including a substrate support for supporting the substrate. A gas delivery system is configured to introduce process gas into the reaction volume of the processing chamber. A plasma generator is configured to selectively generate RF plasma in the reaction volume. A clamping system is configured to clamp the substrate to the substrate support during deposition of the film. A backside purging system is configured to supply a reactant gas to a backside edge of the substrate to purge the backside edge during the deposition of the film.