Material deposition for high aspect ratio structures
US9852902B2 · kind B2 · utility
2Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2014 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | Oct 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67253
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Ion species are supplied to a workpiece comprising a pattern layer over a substrate. A material layer is deposited on the pattern layer using an implantation process of the ion species. In one embodiment, the deposited material layer has an etch selectivity to the pattern layer. In one embodiment, a trench is formed on the pattern layer. The trench comprises a bottom and a sidewall. The material layer is deposited into the trench using the ion implantation process. The material layer is deposited on the bottom of the trench in a direction along the sidewall.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.