Etch system and method for single substrate processing

US9852920B2 · kind B2 · utility

Assignee

• TOKYO ELECTRON LIMITED · JP

Inventors

• Ian J. Brown · Austin, US
• Wallace P. Printz · Austin, US

Key dates

• Filing date: Feb 9, 2016
• Grant date: Dec 26, 2017
• Expiry date: Mar 9, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/6708
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Provided are a method and system for increasing etch rate and etch selectivity of a masking layer on a substrate in an etch treatment system, the etch treatment system configured for single substrate processing. The method comprises placing the substrate into the etch processing chamber, the substrate containing the masking layer and a layer of silicon or silicon oxide, obtaining a supply of steam water vapor mixture at elevated pressure, obtaining a supply of treatment liquid for selectively etching the masking layer over the silicon or silicon oxide at a selectivity ratio, combining the treatment liquid and the steam water vapor mixture, and injecting the combined treatment liquid and the steam water vapor mixture into the etch processing chamber. The flow of the combined treatment liquid and the steam water vapor mixture is controlled to maintain a target etch rate and a target etch selectivity ratio of the masking layer to the layer of silicon or silicon oxide.