Integrated assemblies

US9853037B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Justin B. Dorhout · Boise, US
• Kunal R. Parekh · Boise, US
• Martin C. Roberts · Boise, US
• Mohd Kamran Akhtar · Boise, US
• Chet E. Carter · Boise, US
• David Daycock · Boise, US

Key dates

• Filing date: Nov 23, 2015
• Grant date: Dec 26, 2017
• Expiry date: Nov 23, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/35
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Some embodiments include an integrated assembly with a semiconductor channel material having a boundary region where a more-heavily-doped region interfaces with a less-heavily-doped region. The more-heavily-doped region and the less-heavily-doped region have majority carriers of the same conductivity type. The integrated assembly includes a gating structure adjacent the semiconductor channel material and having a gating region and an interconnecting region of a common and continuous material. The gating region has a length extending along a segment of the more-heavily-doped region, a segment of the less-heavily-doped region, and the boundary region. The interconnecting region extends laterally outward from the gating region on a side opposite the semiconductor channel region, and is narrower than the length of the gating region. Some embodiments include methods of forming integrated assemblies.