Patent · US Active

Apparatuses and methods for forming multiple decks of memory cells

US9853046B2 · kind B2 · utility

19Cited by
2References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 6, 2016
Grant dateDec 26, 2017
Priority date
Expiry dateJun 6, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B43/40
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Some embodiments include apparatuses and methods having multiple decks of memory cells and associated control gates. A method includes forming a first deck having alternating conductor materials and dielectric materials and a hole containing materials extending through the conductor materials and the dielectric materials. The methods can also include forming a sacrificial material in an enlarged portion of the hole and forming a second deck of memory cells over the first deck. Additional apparatuses and methods are described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.