Semiconductor device and method for manufacturing the semiconductor device
US9853139B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 10, 2015 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | Feb 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device provided herein includes: a fourth region of a p-type being in contact with a lower end of the gate trench; a termination trench provided in the front surface in a range outside the second region; a lower end p-type region of the p-type being in contact with a lower end of the termination trench; a lateral p-type region of the p-type being in contact with a lateral surface of the termination trench on an outer circumferential side, connected to the lower end p-type region, and exposed on the front surface; and a plurality of guard ring regions provided on the outer circumferential side with respect to the lateral p-type region and exposed on the front surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.