Resistance switching memory device and method of manufacturing the same
US9853215B1 · kind B1 · utility
7Cited by
7References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2016 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | Dec 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
A resistance switching memory device is provided, including an insulating layer having a top surface, a bottom electrode embedded in the insulating layer, a resistance switching layer disposed on the bottom electrode, and a top electrode formed on the resistance switching layer and covering the resistance switching layer. Also, the bottom electrode has an upper portion protruding from the top surface of the insulating layer, and the upper portion has round corners at edges.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.