Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
US9853420B2 · kind B2 · utility
4Cited by
80References
20Claims
0Family size
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Key dates
| Filing date | Nov 29, 2016 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | Dec 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4025
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.