Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface
US9856558B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2008 |
| Grant date | Jan 2, 2018 |
| Priority date | — |
| Expiry date | Oct 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3444
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.