Patent · US Active

Semiconductor device with a passivation layer

US9859395B2 · kind B2 · utility

0Cited by

4References

36Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Gerhard Schmidt · Graz, AT
Josef Bauer · Munich, DE
Carsten Schaeffer · Annenheim, AT
Oliver Humbel · Maria Elend, AT
Angelika Koprowski · Klagenfurt, AT
Sirinpa Monayakul · Villach, AT

Key dates

Filing date	Sep 30, 2014
Grant date	Jan 2, 2018
Priority date	—
Expiry date	Mar 17, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/112
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a semiconductor body with a first surface, a contact electrode arranged on the first surface, and a passivation layer on the first surface adjacent the contact electrode. The passivation layer includes a layer stack with an amorphous semi-insulating layer on the first surface, a first nitride layer on the amorphous semi-insulating layer, and a second nitride layer on the first nitride layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.