Multiple step thin film deposition method for high conformality
US9859403B1 · kind B1 · utility
4Cited by
15References
19Claims
0Family size
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Key dates
| Filing date | Jul 22, 2016 |
| Grant date | Jan 2, 2018 |
| Priority date | — |
| Expiry date | Jul 22, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
During a physical vapor deposition (PVD) process, the ion energy of a depositing species is controlled. By varying the ion energy throughout the process, the degree of conformality of the deposited layer over three-dimensional structures, including the extent to which the deposited layer merges between adjacent structures can be controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.