Reflective mask blank, reflective mask, and method for manufacturing semiconductor device
US9864267B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2014 |
| Grant date | Jan 9, 2018 |
| Priority date | — |
| Expiry date | Dec 28, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/185
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
To provide a reflective mask blank which may inhibit a variation in reflectance with respect to EUV light due to counter diffusion between a protective film and a material of an adjacent phase-shift film pattern caused by thermal diffusion even if the power of an exposure light source of an EUV exposure machine becomes high; a reflective mask manufactured therefrom; and a method for manufacturing a semiconductor device. The reflective mask blank comprises a multilayer reflective film 13, protective film 14, and phase-shift film 16 for shifting a phase of the EUV light, which are formed in said order on a substrate 12. The protective film 14 is made of a material containing ruthenium as a main component, the phase-shift film 16 has a tantalum-based material layer comprising tantalum, and an anti-diffusion layer 15 comprising ruthenium and oxygen is formed on a surface of the protective film 14, or as a part of the protective film 14 on a side adjacent to the phase-shift layer 16, so as to inhibit counter diffusion in relation to the phase-shift film 16, thereby inhibiting the thermal diffusion between the protective film 14 and the material of the phase-shift film pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.