Apparatus and method for tuning a plasma profile using a tuning electrode in a processing chamber
US9865431B2 · kind B2 · utility
3Cited by
8References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2014 |
| Grant date | Jan 9, 2018 |
| Priority date | — |
| Expiry date | Feb 12, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention relate to apparatus for enhancing deposition rate and improving a plasma profile during plasma processing of a substrate. According to embodiments, the apparatus includes a tuning electrode disposed in a substrate support pedestal and electrically coupled to a variable capacitor. The capacitance is controlled to control the RF and resulting plasma coupling to the tuning electrode. The plasma profile and the resulting deposition rate and deposited film thickness across the substrate are correspondingly controlled by adjusting the capacitance and impedance at the tuning electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.