Nitride film formed by plasma-enhanced and thermal atomic layer deposition process
US9865455B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2016 |
| Grant date | Jan 9, 2018 |
| Priority date | — |
| Expiry date | Sep 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided are methods and apparatuses for depositing a nitride film using one or more plasma-enhanced atomic layer deposition cycles and one or more thermal atomic layer deposition cycles in a single reactor. The number of thermal atomic layer deposition cycles can be equal to or greater than the number of plasma-enhanced atomic layer deposition cycles. Incorporation of thermal atomic layer deposition cycles with plasma-enhanced atomic layer deposition cycles can allow for greater fine-tuning of properties of the nitride film. In some implementations, the nitride film is a silicon nitride film. The silicon nitride film can be fine-tuned to allow for a more silicon-rich film with a greater refractive index. In some implementations, the plasma-enhanced atomic layer deposition cycles and the thermal atomic layer deposition cycles can be maintained at the same wafer temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.