Fabrication of a silicon structure and deep silicon etch with profile control
US9865472B2 · kind B2 · utility
3Cited by
15References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2016 |
| Grant date | Jan 9, 2018 |
| Priority date | — |
| Expiry date | Apr 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.