Patent · US Active

Laser ashing of polyimide for semiconductor manufacturing

US9865564B2 · kind B2 · utility

3Cited by
14References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 18, 2015
Grant dateJan 9, 2018
Priority date
Expiry dateFeb 18, 2035

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T156/1917
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A system for laser ashing of polyimide for a semiconductor manufacturing process is provided. The system includes: a semiconductor chip, a top chip attached to the semiconductor chip by a connection layer, a supporting material, a polyimide glue layer disposed between the supporting material and semiconductor chip, a plasma asher, and an ashing laser configured to ash the polyimide glue on the semiconductor chip.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.