Switching device
US9865728B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2017 |
| Grant date | Jan 9, 2018 |
| Priority date | — |
| Expiry date | Feb 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
Abstract
A switching device including a semiconductor substrate including a trench (gate electrode) extending in a mesh shape is provided, and the upper surface of the semiconductor substrate is covered by the interlayer insulating film. Within an element range a contact hole is provided in an interlayer insulating film above each cell region while within a surrounding range an entire upper surface of each cell region is covered by the interlayer insulating film. The first metal layer covers the interlayer insulating film, and has recesses above the contact holes. The insulating protective film covers an outer peripheral side portion of the first metal layer within the surrounding range. The second metal layer covers the first metal layer within an opening of the insulating protective film. Within the surrounding range, a second conductivity-type region extending to below lower ends of the trench and is electrically connected to the body region, is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.