Patent · US Active

Merged P-i-N Schottky structure

US9865749B1 · kind B1 · utility

0Cited by

5References

20Claims

0Family size

Assignee

Siliconix Technology C. V. · SG

Inventors

Davide Chiola · Chino, US
Kohji Andoh · El Segundo, US
Silvestro Fimiani · Torino, IT

Key dates

Filing date	Dec 7, 2010
Grant date	Jan 9, 2018
Priority date	—
Expiry date	Sep 8, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/221

Abstract

A Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper oppositely doped diffusion region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.