Substrate bonding apparatus and substrate bonding method
US9870922B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 24, 2015 |
| Grant date | Jan 16, 2018 |
| Priority date | — |
| Expiry date | Apr 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/94
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate bonding apparatus (100) includes a vacuum chamber (200), a surface activation part (610) for activating respective bonding surfaces of a first substrate (301) and a second substrate (302), and stage moving mechanisms (403, 404) for bringing the two bonding surfaces into contact with each other, to thereby bond the substrates (301, 302). In order to activate the bonding surfaces in the vacuum chamber (200), the bonding surfaces are irradiated with a particle beam for activating the bonding surfaces, and concurrently the bonding surfaces are also irradiated with silicon particles. It is thereby possible to increase the bonding strength of the substrates (301, 302).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.