Method for producing substrate for mounting semiconductor element
US9870930B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2014 |
| Grant date | Jan 16, 2018 |
| Priority date | — |
| Expiry date | Mar 11, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for producing a substrate for semiconductor element mounts are provided. A base substrate can be prepared having on a first metal layer, a second metal layer through which a metal layer for instrumentation is hardly diffusible. A patterned resist mask layer on the second metal layer can be formed. A surface of the second metal layer under reprocessing treatment can form a reprocessed surface which can be provided with an organic film that controls adhesion between the metal layer for instrumentation and the reprocessed surface by a liquid agent containing a component that shows the nature of amphoteric surfactant. The metal layer for instrumentation can be formed on the reprocessed surface via the organic film. A semiconductor element mount portion and an electrode terminal portion can be electroformed on the metal layer for instrumentation. The resist mask from the second metal layer of the base substrate may be removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.