Pressure purge etch method for etching complex 3-D structures
US9870932B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2016 |
| Grant date | Jan 16, 2018 |
| Priority date | — |
| Expiry date | Jul 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/20
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for etching a substrate and removing byproducts includes a) setting process parameters of a processing chamber for a selective dry etch process; b) setting process pressure of the processing chamber to a first predetermined pressure in a range from 1 Torr to 10 Torr for the selective dry etch process; c) selectively etching a first film material of a substrate relative to a second film material of the substrate in the processing chamber during a first period; d) lowering pressure in the processing chamber to a second predetermined pressure that is less than the first predetermined pressure by a factor greater than or equal to 4; and e) purging the processing chamber at the second predetermined pressure for a second period.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.